X-Ray Stress Measurement of Silicon Single Crystal
Hiroshi Suzuki, Koichi Akita, Hiroshi Misawa
Abstract:In the X-ray stress measurement of single crystal, crystal oscillation operation is required in order to obtain perfect diffraction profile. Accurate diffraction profiles can be measured by using the cy-oscillation method proposed in this study. Using this oscillation method, the elasticity applied stress measurement of the silicon single crystal used as a material of semiconductor device was carried out. Lattice strain was obtained from peak shift of diffraction profile. Stress was calculated by using lattice strain of three different diffraction planes. As a result, the measured stress agree well with the applied stress evaluated from a strain gage. Therefore, the possibility of elastical1y applied stress measurement of the single crystal by the cy-oscillation method was confirmed. Also, the relationship between setting error of the test piece and stress error was theoretically examined. It was confirmed that the effect of misalignment on X-ray stress measurement of single crystal materials is much larger than in the case of polycrystal1ine materials. In this study, a microscope was used to set the specimen. Key Words:X-ray stress measurement, Silicon single crystal, Diffraction profile, Semiconductor device, Lattice strain