Development of Polysiloxane Type Electron Beam Resist for Optical Elements
Yoshiaki SAKURAI, Kazuo SATOH, Hiroki FUKUDA, Tsutom YOTSUYA and Yoshihiko SUZUKI
Abstract:Electron beam lithography is a highly flexible method to fabricate micro-optical elements. However, the long exposure time is the largest problem, which derived from the lack of the sensitivity in electron beam resist. Instead of conventional carbon-based resists, physical properties of polydimethylsiloxane (PDMS) and poly[dimethylsiloxane-co-methylvinylsiloxane] (PMVS) for electron beam were investigated. As a result, these polysiloxanes exhibited a much higher sensitivity of 1.5 and 0.9 ƒÊC/cm2, respectively and adequate ƒÁ value of 1.3. We succeeded in fabricating a four-level computer generated hologram on a glass substrate with ITO film using PMVS in 1/10 exposure time compared with conventional resists. Key Words:Electron beam lithography, Electron beam resist, Polysiloxane, Micro-optical element, Computer generated hologram