Original Paper(Vol.62 No.11 pp.668-671)

Zinc Oxide Thick Film Growth on n-Type Gallium Nitride by Photoassisted Electrodeposition

Kazuyuki UNO, Junpei IKEGAMI, Mitsuteru SAINOKAMI and Ichiro TANAKA

Abstract:inc oxide (ZnO) thick film growth on n-type gallium nitride (n-GaN) using an electrodeposition was investigated. We supplied electrons to the surface by light excitation using a Xe lamp for a long continuous electrochemical deposition. By using this technique, stable electrochemical reactions for 20 h and 120 h were realized. The sample grown for 20 h had a thickness of 26ƒÊm, an averaged optical transmission of 85% in the visible-light region, and no obvious grain boundary from its cross-sectional SEM image. On the other hand, the sample grown for 120 h had a thickness of 140ƒÊm, an averaged optical transmission of 25%, and many grain boundaries. Optimization of growth conditions for the thickness of above 30-40ƒÊm is necessary.

Key Words:Zinc oxide, Electrodeposition, Electrochemical deposition, Thick film growth