Residual stress measurement in AlN film deposited by alternating sputtering method
Kusaka Kazuya; Hanabusa Takao; Tominaga Kikuo; Ao Takahiro
Abstract:Crystal orientation and residual stress development in AlN films deposited on BLC glass (Borosilicate glass; the thermal stress expansion coefficient of which is nearly equal to that of AlN) substrate were investigated by the X-ray diffraction method. The AlN films were prepared by an alternating planar magnetron sputtering system under the condition of constant substrate temperature, various nitrogen gas pressure between 0.17 Pa and 1.1 Pa and various switching time to alternate the anodic and cathodic polarity of two target electrodes between 30 sec and 600 sec. The measurement of intensity from 00 center dot 2 - diffraction showed that the c-axis orientation of AlN film was improved when the film was deposited at low nitrogen gas pressure below 0.5 Pa and large switching time over 300 sec. The tensile residual stresses were found in the films deposited at low nitrogen gas pressure below 0.3 Pa or high nitrogen gas pressure over 0.8 Pa and short switching time below 120 sec. Key Words:AlN film, residual stress, X-ray diffraction, sputtering, coating, ion bombardment