Influence of oxygen concentration on dislocation generation at stress singularity fields in silicon substrates
Ohta Hiroyuki; Kitano Makoto
Abstract:With the increasing level of integration in semiconductor devices, new types of silicon wafers are developed to respond to the needs arising in electric design. The new types of wafers contain different concentrations of oxygen atoms then the former silicon wafers. Therefore, the oxygen concentration dependence of dislocation generation in silicon substrates is investigated. The specimens were silicon substrates with (on the surface) stressed thin-film bands, at whose edges stress singularity fields were formed. The Dislocation-generation strength was measured by changing the bandwidth and detecting limit bandwidth for dislocation generation. Since the limit bandwidth did not depend on the oxygen concentration, it was shown that the oxygen atoms do not affect the generation of dislocations. On the other hand, the dislocation density depended strongly on the oxygen concentration. Since the density is related to the mobility of dislocations, it can be said that the effect of oxygen atoms is only the mobility of dislocation. Key Words:dislocation, silicon, silicon nitride, oxygen, stress singularity parameter