Deposition of ZnO Film by Using an Atomospheric Pressure Cold Plasma Generator
Yoshifumi SUZAKI, Seiki EJIMA, Tomokazu SHIKAMA, Osamu TANAKA, Takahiro KAJITANI and Hideomi KOINUMA
Abstract:Under atmospheric pressure, homogenous nonequilibrium low temperature plasma was generated by a rf (13.56 MHz) excitation of He gas. By using this cold plasma, ZnO films were deposited on glass substrates exposed to air at a room temperature. Bis-Dipivaloylmethanato Zinc ((C11H19O2)2) was supplied into the plasma with carrier He gas. Thickness and electrical resistivity of the films were then measured. Dependence of rf power and anode-cathode gap on thickness and the electrical resistivity was investigated. In addition, microstructure of the films was studied by FE-SEM observation. Key Words:Transparent electrical conductive ZnO film, Atmospheric pressure, Cold plasma generator, Bis-dipivaloylmethanato Zinc, He gas