Effect of Material Heating on Fabrication of ZnO Thin Films Using Cold He Plasma at Atmospheric Pressure
Tomokazu SHIKAMA, Yoshifumi SUZAKI, Seiki EJIMA, Yasuaki IDE, Syunryou AZUMA, Osamu TANAKA, Takahiro KAJITANI and Hideomi KOINUMA
Abstract:Under atmospheric pressure, homogenous non-equilibrium cold plasma was generated by rf (27.12 MHz) excitation of He (1700 ml/min) and O2 (0-15 ml/min) gases. Bis-dipivaloylmethanato zinc (Zn(O2C11H19)2) was vaporized and carried with the He gas flow into the plasma zone to be deposited as a thin film on a glass substrate at room temperature. To assist the decomposition and oxidation of Zn(Oa2C11H19)2 for creation of the ZnO film, a heat treatment tube was placed between the vaporizer and the plasma torch and oxygen gas was added to the system either before or after the heat treatment. XRD, AFM, and AES analyses verified fabrication of a polycrystalline ZnO film. Key Words:Zinc oxide film, Atmospheric pressure, Cold plasma generator, Bis-Dipivaloylmethanato Zinc, Helium gas, Oxygen gas, XRD, AFM