Low-semperature Growth of GaAs@Organometallic Vapor Phase Epitaxy Using TEGa and TBAs
Keiji HIDAKA, Takashi HIRAMATSU, Yoshikazu TERAI, Osamu ERYU, and Yasufumi FUJIWARA
Abstract:GaAs epitaxial layers were grown by organometallic vapor phase epitaxy (OMVPE) using TEGa and TBAs over a wide range of growth temperature (350-700) and V/III ratio (2-9). GaAs with excellent surface morphology was obtained when the growth temperature was higher than 600. The GaAs surface tended to be rough with decreasing growth temperature below 550. When the growth temperature was decreased to 400, p-type GaAs was obtained with specular surface. The hole concentration increased with decreasing V/III ratio. The hole concentration was as high as 5.5~1017 cm-3 for the sample grown at 400 with V/III ratio = 2. Key Words:Low-temperature growth of GaAs, OMVPE, TEGa, TBAs