Photoluminescence Properties of Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition
Yoshikazu TERAI, Kazuki YOSHIDA and Yasufumi FUJIWARA
Abstract:Photoluminescence (PL) properties of Eu-doped ZnO (ZnO:Eu) grown by a sputtering-assisted metalorganic chemical vapor deposition technique were investigated. In PL measurements at 300 K, the samples annealed at 600 for 30 min showed clear red-emission lines due to the intra-4f shell transition of 5D07FJ (J = 2, 3) in Eu3+. In photoluminescence excitation (PLE) spectra, the PL were observed under the high-energy excitation above the band-gap energy of ZnO (indirect excitation) and the low-energy excitation resonant to the energy levels of 7F0-5D3 and 7F0-5D2 transitions in Eu3+ (direct excitation). These results revealed that the energy transfer from ZnO host to Eu3+ was accompanied under indirect excitation in ZnO:Eu. Key Words:Rare-earth doped semiconductors, MOCVD, ZnO, intra-4f shell transition in Eu,3+, photoluminescence