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%      材料学会投稿用TeXサンプルファイル  Ver1.1
%      Ver1.1	作成日：2014年4月9日	作成者：Hiroaki Tanaka-KANEKIYO and Ryosuke MATSUMOTO
%      Ver1.3	作成日：2024年4月		作成者：Daisuke MATSUNAKA
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\documentclass{jarticle}
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\usepackage{jsms2014v1}% 材料スタイルファイル
\usepackage{epic,eepic}% Fig関係
\usepackage[dvips]{graphicx}% \includegraphics
\usepackage{here}% 図表の位置を強制指定(位置指定にHを使用)
\usepackage{color}% 著者情報の白点の入力に必要
\usepackage{amsmath}% 数式，boldsymbolの利用など(ams*** は米国数学会のスタイル)
\usepackage{amssymb}
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\renewcommand{\rmdefault}{ptm}% 標準のフォントをTimesに変更
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%   マクロ定義はここで宣言しておく
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\def\HLINE{\noalign{\hrule height1pt}}    % 表で使う太線
\def\degC{\kern-.2em\r{}\kern-.3em C}   % ℃の出力
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%----- 式番号の右を少し開ける数式の環境 -----
\newenvironment{jsmseq}
{
\vspace*{-1mm}
\begin{flushleft}
\begin{minipage}{0.45\textwidth}
\begin{equation}
}
{
\end{equation}
%\vskip 1mm
\end{minipage}
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%      行送りについては適宜調整する必要あり
%   (2)コンパイル後にフォントがない旨のメッセージが出るが
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\begin{center}
{\fontsize{15pt}{20pt}\selectfont   % Times 15pt
和文タイトル：材料学会\LaTeX テンプレートVer 1.3 ${^\dag}$\\
}
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%   英文タイトルの記述
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\begin{center}
{\fontsize{13pt}{0pt}\selectfont  % Times 13 pt
A Sample of Manuscript of Submitted Paper to
\\[1mm]
Journal of the Society of Materials Science, Japan
}
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\vspace*{-4mm}   %   縦方向の隙間の調整
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{\small by}
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Ichiro\ Z{\fontsize{7pt}{0pt}\selectfont AIRYO}$^{\ast}$, 
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Jiro\ Z{\fontsize{7pt}{0pt}\selectfont AIRYO}$^{\ast\ast}$, 
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%   英文アブストラクトの記述
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\begin{center}
\begin{minipage}{160mm}
\baselineskip 12pt%minipage内の行間のローカルな調整
\setlength{\parindent}{4mm}　%minipage内のインデントのローカルな調整
{\fontsize{9.5pt}{0pt}\selectfont   % Times 9.5 pt
%%%%% アブストラクト記入はじまり %%%%%
Wide-bandgap semiconductor ZnO potentially exhibits high radiation hardness since large displacement threshold energy of constituent atoms can be expected due to the small lattice constant and large bandgap energy. To study the radiation hardness, the effect of proton irradiation on single-crystalline $n$-type ZnO films was examined. These films were grown by molecular beam epitaxy, and irradiated by $8$~MeV protons with fluences of 
$1.4\times 10^{15}$, $2.8\times 10^{15}$, $5.6\times 10^{15}$ and $1.4\times 10^{16}$~p/cm$^2$. A rapid increase of electrical resistance by a decrease of carrier density was observed with a threshold fluence of about $1\times 10^{15}$~p/cm$^2$. This change in electrical properties was associated with a steep deterioration of the near-bandedge emission intensity in cathodoluminescence. These radiation damages were found to recover after a thermal annealing over $600$\degC. Such high radiation hardness of ZnO exceeds that of GaN, indicating promising application of this material to space- and nuclear-electronics. 
%%%%% アブストラクト記入おわり %%%%%%
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\vspace*{-2.5mm}
\hspace*{8mm}{\fontfamily{qbk}\fontsize{9.5pt}{0pt}\selectfont  %Bookman Old Style 9.5 pt
\textbf{\textit{Key words:}}
}

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\begin{center}
\begin{minipage}{130mm}
\baselineskip 12pt
{\fontfamily{pnc}\fontsize{9.5pt}{0pt}\selectfont  %New Century Font 9.5 pt
%%%%% 英文キーワード記入はじまり %%%%%
ZnO, 8 MeV protons, Radiation damage, Radiation hardness, 
Thermal annealing, xxx xxx xxxxx, xxxxxxxx, xxx, xxxxxxx xxxx
%%%%% 英文キーワード記入おわり %%%%%%
}
\end{minipage}
\end{center}

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原稿受理　令和　　年　　月　　日　Received  \hspace*{18mm} \copyright  2024 The Society of Materials Science, Japan \\
%%%%%%%%%%%%% Affiliation 1 %%%%%%%%%%%%%%%
%　※Web掲載のフォーマットに従い和文と英文は別の行で書く形式にしている．
%　　　改行なし（以前の形式）で書いても良いとのこと．著者名が多い場合は誌面の節約になる．
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\parbox[l]{4mm}{$\ast$}
正 会 員　京都大学大学院　工学研究科　機械理工学専攻 〒615-8540　京都市西京区京都大学桂\\
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\parbox[l]{4mm}{\textcolor{white}{$\ast$}}    %白色で*を出力（印刷所で必要）
 {\fontfamily{pnc} \selectfont  % New Century Font 7 pt 
Department of Mechanical Engineering and Science, Graduate School of Engineering, Kyoto University, Kyoto-Daigaku-Katsura, Nishikyo-ku,} \linebreak 
\parbox[l]{4mm}{\ }
 {\fontfamily{pnc} \selectfont  % New Century Font 7 pt 
Kyoto 615-8540.} \\
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%%%%%%%%%%%%% Affiliation 2 %%%%%%%%%%%%%%%
\parbox[l]{4mm}{$\ast\hspace*{-0.5mm}\ast$}
九州工業大学大学院　情報工学研究科　情報システム専攻　〒820-8502　福岡県飯塚市川津\\
%
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{\fontfamily{pnc} \selectfont  % New Century Font 7 pt 
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology, Kawazu, Iizuka, Fukuoka 820-8502.}\\
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%%%%%%%%%%%%% Affiliation 3 %%%%%%%%%%%%%%%
\parbox[l]{4mm}{$\ast\hspace*{-0.5mm}\ast\hspace*{-0.5mm}\ast$}
大阪大学大学院　工学研究科　知能・機能創成工学専攻　〒565-0871　大阪府吹田市山田丘2番1号\\
\parbox[l]{4mm}{\textcolor{white}{$\ast\hspace*{-0.5mm}\ast\hspace*{-0.5mm}\ast$}}  %白色で*を出力（印刷所で必要）
{\fontfamily{pnc} \selectfont  % New Century Font 7 pt 
Department of Adaptive Machine Systems, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871.}
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}

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{\small  % 本文中のフォントを9ptに変更
\begin{multicols}{2}
\baselineskip 14.1pt
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%   本文の入力の開始
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\section{緒\hspace{4zw}言}

日本材料学会会誌「材料」に投稿できる原稿は，投稿規定6.に定める論文，資料，総説，講座，解説，国内外トピックス，
委員会報告，巻頭言，討論，会員便りのいずれかである．

論文はその内容が一般に公表されている国内外の印刷物に未投稿のものであって，理論，実験等に誤りがなく，
材料学に関して独創的な研究で，価値ある結論あるいは事実を含むものでなければならない．

それぞれの原稿は，A4用紙に25字×51行×2段＝2550字，横書き（刷上がり1ページに相当）に執筆する．
所定の投稿申込用紙と，「投稿原稿見本」に従って作成した投稿原稿のPDFファイルを本会編集委員会宛に提出する．
正原稿は編集委員会において掲載可が決定され本会より提出の依頼があるまで著者が保管する．

\subsection{原稿の執筆上の注意}

原稿の書き方は，投稿規程および原稿執筆上の規約に従う必要があるが，第1ページおよび図などは本ページに示す見本を参照するとよい．
左右に21mm，上23mm，下18mmのマージンをとる．本文は2段組としコラム幅は80mm，コラム間隔を10mmとする．
論文および資料の場合，次の事項を番号順に必ず記載する．(1)和文題名(15ポイント)，(2)和文著者名(11ポイント)，
(3)英文題名(13ポイント)，(4)英文著者名（10.5ポイント），(5)英文要旨(9.5ポイント)，(6)英文キーワード(9.5ポイント)．
また，最下段に本文との間に線を入れて(7)和文の会員種別・所属・所在地，英文の所属・所在地を記載する．
その他の原稿では記載事項が異なるので原稿執筆上の規約を参照すること．

本文(9ポイント)は，見本のように上記(1)〜(6)を記述した後に，1行空けて書き始める．

図，表および写真は，論文，資料，委員会報告については，見本のように用紙にそのまま貼り込める大きさに用意し，
本文中の説明と離れない位置に貼り付ける．図・表どうし，あるいは図，表と本文は１行以上間隔をあけるようにする．
カラーの図面や写真の掲載を希望する場合は，掲載料に加えて別途カラー印刷代が加算される．

\section{ABC照射試料の準備}

分子線エピタキシー（MBE）装置を用いてFig. 1に示すノンドープの単結晶ZnO薄膜を作製した．
まず，A面サファイア基板上に15~nmのZn$_{0.85}$Mg$_{0.15}$O薄膜を300\degC で成膜した．
真空中で800\degC ・30分間の熱処理を経て，300
□□□□□□□□□

%%%% Equation 1 %%%%%%%%%%%%%%%%%%%%%
% 冒頭で定義したjsmseq環境を使用
%       （材料のフォーマットに合わせて式番号の右にスペースが入る）
\begin{jsmseq}
	\frac{\mathrm{d}\sigma}{\mathrm{d}\Omega}
	= 
	\left(
		\frac{Z_{1}Z_{2}e^{2}}{8\pi\varepsilon_{0}M_{1}\nu^{2}}
	\right)^{2}
	\mathrm{cosec}^{4}\frac{\theta}{2}
\label{eq:1}   %　式のラベル
\end{jsmseq}
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

%%%%% Fig.1 （二段組中の図）%%%%%%%%
\begin{figure}[H]
	\centering\includegraphics[keepaspectratio, width=50mm]{Fig1.eps}　%[図のサイズ指定]{ファイル名}
	\caption{Schematic diagram of a sample structure.}　%　表題
	\label{fig1}  % ラベル
\end{figure}
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

%%%%% Table 1 （二段組中の表）%%%%%%
\begin{table}[H]
	\caption{Electrical properties of a single-crystalline ZnO film.}
	\label{table1}
	\begin{center}
		\small
		\begin{tabular}{cccc}
			\HLINE
			& Resistivity & Hall mobility & Carrier density \\ 
			& ($\Omega$) & (cm$^2$/Vs) & (cm$^{-3}$)  \\ 
			\HLINE
			300~K & 0.107 & 103 & 5.64$\times$10$^{-17}$ \\ 
			700~K & 0.273 & 302 & 7.57$\times$10$^{-16}$ \\ 
			\HLINE
		\end{tabular}
	\end{center}
\end{table}
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

%%%%%% Table 2 （一段組み）%%%%%%%%%%
%\begin{table*}[tb]
%	\caption{Electrical properties of a single-crystalline ZnO film.}
%	\label{table2}
%	\begin{center}
%		\small
%		\begin{tabular}{cccc}
%			\HLINE
%			& Resistivity & Hall mobility & Carrier density \\ 
%			& ($\Omega$) & (cm$^2$/Vs) & (cm$^{-3}$)  \\ 
%			\HLINE
%			300~K & 0.107 & 103 & 5.64$\times$10$^{-17}$ \\ 
%			700~K & 0.273 & 302 & 7.57$\times$10$^{-16}$ \\ 
%			\HLINE
%		\end{tabular}
%	\end{center}
%\end{table*}
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

%%%%%%　Fig. 2（図を並べて配置）%%%%%%%
\begin{figure}[H]
	\begin{center}
		\begin{minipage}{35mm}
			\centering\includegraphics[keepaspectratio, width=30mm]{Fig2a.eps}\\
			\fontsize{8.5pt}{0pt}\selectfont{(a) Left figure}
		\end{minipage}
		\hspace{5mm}
		\begin{minipage}{35mm}
			\centering\includegraphics[keepaspectratio, width=30mm]{Fig2b.eps}\\
			\fontsize{8.5pt}{0pt}\selectfont{(b) Right figure}
		\end{minipage}
	\end{center}
	\caption{Schematic diagram of an experimental setup of 8~MeV proton beam irradiation.}
	\label{fig2}
\end{figure}
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

%%%%%%%% Fig. 3 （一段組み）%%%%%%%%%%%
\begin{figure*}[t]
	\centering\includegraphics[keepaspectratio, width=150mm]{Fig3.eps}
	\caption{Very long sideways figure using two columns.}
	\label{fig3}
\end{figure*}
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

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%      スタイルファイルについて
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\section{スタイルファイル{\tt jsms2014v1.sty}について}

材料のフォーマットに合うように、以下の指定を行っています．

\begin{itemize}
\item 冒頭部分でマージン設定（本サンプルの作成環境（Windows7, WinShell）で，Web掲載の「材料学会WordテンプレートVer1.0」とほぼ同じ配置で出力されるように調整している．
環境により微調整が必要となることが多いので紙出力した上で適宜調整して下さい．）

\item 脚注（footnote）の線の指定

\item 章，説のフォントの指定

\item 図，表のキャプションのフォーマットを指定（\verb|[表\ref{table1}]|などで本文中で引用する．）

\item 文献番号が1)という形となるように指定（\verb|[\cite{アイテム名}]|で本文中で引用する．）

\item 章，説の見出しのフォーマット指定

\item 参考文献のタイトルを，文字間隔を空けてセンタリングして出力するように指定

\item 文献のフォントサイズなどを指定

\item その他のスタイル調整等は，本サンプルファイル中で行っている．
\end{itemize}

%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%      サンプルファイルについて
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
\section{{\tt jsms-sample-2014v1-1.tex}について}

本ファイルを適宜書き換えて使用してください．
以下，注意点や使用方法に関する記述です．

\begin{itemize}
\item 著者名とフッター部分の所属先の記述に使用している「*」記号などは，自動には対応していません．
著者名の記述部分と，フッターの記述部分とで，手動で対応を付けてください．

\item 図の挿入と配置は，figure環境を用いることにより図の番号を自動で付番することができます．
ただし，システムが全体の配置を判断した上で最も適した場所（TeXのコンパイラがそう判断するという意味です）に配置してしまいます．
これを，できるだけ記述した箇所のところに配置するために，\verb|[H]|というオプションを付けています．

\item figure環境による図の配置でどうしてもうまくいかない場合は，手動で図を挿入し，図番号やキャプションも手動で書くという方法があります．例えば

\begin{minipage}{1.0\columnwidth}
\begin{verbatim}

\begin{center}
\includegraphics[keepaspectratio, width=50mm]
{Fig1.eps}
%
\\
%
\noindent
 {\fontsize{8pt}{0pt}\selectfont
Fig.1 Example
}
\end{center}

\end{verbatim}
\end{minipage}

と記述することにより，記述箇所に強制的に図が入ります．ただし，この場合図とキャプションの間に改ページが入ってしまったり，図の途中に改ページ部が来た場合には不釣り合いな空白が入って次のページに図がまわってしまうなどの問題もあります（figure環境を使えば，こういったことは起きません）．また，相互参照により図の番号を呼ぶことができなくなります．

\item 参考文献は，\verb|thebibliography| 環境で記述するようにしてあります．この記述スタイルでは，列挙した順番に自動的に1から順番に番号が符されます．

\item 数式は，\verb|equation| 環境を少し変形させた\verb|jsmseq| 環境をマクロで定義してあります．
これは，式番号の右にわずかながら空白を入れるためです．\verb|equation| 環境とほぼ同じように使うことができます．

\item コンパイルを行うと，フォントサイズに関する警告が非常にたくさん出されます．
確認した限りでは，フォントがない場合でも代替フォントでほぼ指定のサイズの文字が出るようになっていると思われます．
新たにフォントをインストールするなどすれば，このあたりの警告は出ないようにできるのではないかと思われます．
\end{itemize}

%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%   参考文献
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
\begin{thebibliography}{99}
%%%%%%%%%%%% 文献リスト %%%%%%%%%%%%%%
\bibitem{Ref01} Ohnishi K, Matsuda S. Radiation effects on semiconductor devices: Recent trends of research works. J Inst Electron Inform Communi Engnr Jpn 2002;85:662-669.
%
\bibitem{Ref02} Gonda S, Tsutsumi H, Ito Y, Mukai T, Nagahama S. Proton radiation effects in nitride lasers and light emitting diodes. Phys Status Solidi (a) 2006;204:231-235.
%
\bibitem{Ref03} Corbett JW, Bourgoin J C. Point defects in solids. Eds. Crawford JH, Slifkin LM, 1975;136, Plenum Press.
%
\bibitem{Ref04} Warner JH, Walters RJ, Messenger SR, Summers GP, Khanna SM, Estan D, Erhardt LS, Houdayer A. High-energy proton irradiation effects in GaAs devices. IEEE Trans Nucl Sci 2004;51:2887-2895.
%
\bibitem{Ref05} Gonda S. Radiation hardness of InGaAsP semiconductor lasers. International conference on InP and Related Materials (IPRM) 2008;WeP29.
%
\bibitem{Ref06} Hallen A, Nawaz M, Zaring C, Usman M, Domeij M, Ostling M. Low-temperature annealing of radiation-induced degradation 4H-SiC bipolar junction transistors. IEEE Electron Device Lett 2010;31:707-709.
%
\bibitem{Ref07} Khanna SM, Estan D, Erhardt LS, Houdayer A, Carlone C, Nedelcescu AI, Messenger SR, Walters RJ, Summers GP, Warner JH, Jun I. Proton energy dependence of the light output in gallium nitride light-emitting diodes. IEEE Trans Nucl Sci 2004;51:2729-2735.
%
\bibitem{Ref08} Nakano M, Makino T, Tsukazaki A, Ueno K, Ohtomo A, Fukumura T, Yuji H, Nishimoto Y, Akasaka S, Takamizu D, Nakahara K, Tanabe T, Kamisawa A, Kawasaki M. MgxZn1-xO-based schottky photodiode for highly color-selective ultraviolet light detection. Appl Phys Express 2008;1:121201-1-121201-3.
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\bibitem{Ref14} SRIM simulation, {\tt http://www.srim.org/}
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